home icon > Goods Details Page > IPP028N08N3 G

IPP028N08N3 G Infineon Power MOSFET

IPP028N08N3 G - Infineon - main product image
Part No.:IPP028N08N3 G
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.06
10+ $ 0.89
500+ $ 0.85
10000+ $ 0.85
15000+ $ 0.84

Technical Specifications

  • Part No.IPP028N08N3 G
  • Model IPP028N08N3 G
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Manufacturer Infineon Technologies
  • Packaging Tube
  • Part Status Active
  • Series OptiMOS™ 3
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 80 V
  • Current - Continuous Drain (Id) @ 25°C 100 A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 2.8 mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
  • Power Dissipation (Max) 300 W (Tc)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package PG-TO220-3
  • RoHS ROHS3 Compliant
  • Standard Package 50
📧 📋 💬